MRF6V14300HR3 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large--Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Operation.
operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed a.
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