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MRF377 - RF Power Field-Effect Transistor

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts, IDQO=u2tp.0utAP,o8wKeMr —ode4,56W4 aQttAsMAvg. Power Gain ≥ 16.7 dB Efficiency ≥ 21% ACPR ≤ - 58 dBc • Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts, IDQO=u2tp.0utAPower — 80 Watts Avg. Power Gain ≥ 16.5 dB Efficiency ≥ 27.
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