MPSA42 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 100 m A) - High voltage (max. 300 V). APPLICATIONS - Video - Telephony - Professional munication equipment. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP plement: MPSA92. Fig.1 1 handbook, halfpage 2 3 MPSA42; MPSA43 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 1 2 3 MAM279 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME MPSA42 MPSA43 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO MPSA42 MPSA43 VCEO collector-emitter voltage MPSA42 MPSA43 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C open collector open base - - - - - - - - 65 - - 65 300 200 6 100 200 100 500 +150 150 +150 V V V m A m A m A m W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - 300 200 V V MIN. MAX. UNIT SC-43A DESCRIPTION plastic single-ended leaded (through hole) package; 3 leads VERSION SOT54 2004 Oct 11 Free Datasheet http://../ NXP Semiconductors Product data sheet NPN high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current MPSA42 MPSA43 IEBO emitter-base cut-off current MPSA42 MPSA43 h FE DC current gain VEB = 6 V; IC = 0 A VEB = 4 V; IC = 0 A VCE = 10 V; note 1 IC = 1 m A IC = 10 m A IC = 30 m A VCEsat VBEsat Cc collector-emitter saturation voltage base-emitter saturation voltage collector capacitance MPSA42 MPSA43 f T Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. transition frequency VCE = 20 V; IC = 10 m A; f = 100 MHz IC = 20 m A; IB = 2 m A; note 1 IC = 20 m A; IB = 2 m A; note 1 VCB = 20 V; IE = ie = 0 A; f = 1 MHz VCB = 200 V; IE = 0 A VCB = 160 V; IE = 0 A CONDITIONS...