Part MMRF1312H
Description RF Power LDMOS Transistors
Category Transistor
Manufacturer NXP Semiconductors
Size 422.79 KB
NXP Semiconductors
MMRF1312H

Overview

  • Internally input and output matched for broadband operation and ease of use
  • Device can be used in a single--ended, push--pull or quadrature configuration
  • Qualified up to a maximum of 52 VDD operation
  • High ruggedness, handles > 20:1 VSWR
  • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
  • Characterized with series equivalent large--signal impedance parameters