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MMRF1312H - RF Power LDMOS Transistors

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NXP

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MMRF1312H RF Power LDMOS Transistors by NXP - Datasheet Preview — Datasheet preview – MMRF1312H

Datasheet Details

Part number	MMRF1312H
Manufacturer	NXP
File Size	422.79 KB
Description	RF Power LDMOS Transistors
Datasheet	MMRF1312H Datasheet
Additional preview pages of the MMRF1312H datasheet.

Product details

Features

Internally input and output matched for broadband operation and ease of use.
Device can be used in a single--ended, push--pull or quadrature configuration.
Qualified up to a maximum of 52 VDD operation.
High ruggedness, handles > 20:1 VSWR.
Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing.
Characterized with series equivalent large--signal impedance parameters Typical.

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Published: Nov 30, 2024 |