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Freescale Semiconductor Technical Data
Document Number: MMRF1312H Rev. 0, 3/2016
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These RF power devices are designed for pulse applications operating at frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and commercial L--Band radar applications such as IFF and DME/TACAN.
Typical Short Pulse Performance: In 900–1215 MHz reference circuit,
VDD = 52 Vdc, IDQ(A+B) = 100 mA
Frequency (MHz)
Signal Type
Pout
Gps
D
(W)
(dB)
(%)
900
Pulse
1615 Peak 15.2
54.0
(128 sec, 10% Duty Cycle)
960
1560 Peak 17.3
55.7
1030
1500 Peak 17.8
53.8
1090
1530 Peak 18.0
54.
MMRF1312H Datasheet
