MMRF1312H Datasheet | NXP Semiconductors

Features - Internally input and output matched for broadband operation and ease of use - Device can be used in a single--ended, push--pull or quadrature configuration - Qualified up to a maximum of 52 VDD operation - High ruggedness, handles > 20:1 VSWR - Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing - Characterized with series equivalent large--signal impedance parameters Typical Applications - Air traffic control systems (ATC), including ground--based secondary radars such as IFF interrogators or transponders - Distance measuring equipment (DME) - Tactical air navigation (TACAN) MMRF1312H MMRF1312HS MMRF1312GS 900- 1215 MHz, 1000 W PEAK, 52 V AIRFAST RF POWER LDMOS TRANSISTORS NI--1230H--4S MMRF1312H NI--1230S--4S MMRF1312HS NI--1230GS--4L MMRF1312GS Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF1312H MMRF1312HS MMRF1312GS 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range (1) Total Device Dissipation @ TC = 25C Derate above 25C VDSS VGS Tstg TC TJ PD - 0.5, +112 - 6.0,...