MMRF1312GS, MMRF1312H - RF Power LDMOS Transistors

Datasheet Details

Part number	MMRF1312GS, MMRF1312H
Manufacturer	NXP
File Size	422.79 KB
Description	RF Power LDMOS Transistors
Datasheet	MMRF1312H-NXP.pdf
Note	This datasheet PDF includes multiple part numbers: MMRF1312GS, MMRF1312H. Please refer to the document for exact specifications by model.

Internally input and output matched for broadband operation and ease of use.
Device can be used in a single--ended, push--pull or quadrature configuration.
Qualified up to a maximum of 52 VDD operation.
High ruggedness, handles > 20:1 VSWR.
Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing.
Characterized with series equivalent large--signal impedance parameters Typical.

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Published: Nov 30, 2024 |