Datasheet Summary
Freescale Semiconductor Technical Data
Document Number: MMRF1312H Rev. 0, 3/2016
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These RF power devices are designed for pulse applications operating at frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and mercial L--Band radar applications such as IFF and DME/TACAN.
Typical Short Pulse Performance: In 900- 1215 MHz reference circuit,
VDD = 52 Vdc, IDQ(A+B) = 100 mA
Frequency (MHz)
Signal Type
Pout
Gps
D
(W)
(dB)
(%)
Pulse
1615 Peak 15.2
(128 sec, 10%...