MMRF1312GS Overview
Freescale Semiconductor Technical Data Document Number: 0, 3/2016 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These RF power devices are designed for pulse applications operating at frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and mercial L--Band...
MMRF1312GS Key Features
- Internally input and output matched for broadband operation and ease of use
- Device can be used in a single--ended, push--pull or quadrature configuration
- Qualified up to a maximum of 52 VDD operation
- High ruggedness, handles > 20:1 VSWR
- Integrated ESD protection with greater negative voltage range for improved
- Characterized with series equivalent large--signal impedance parameters