Datasheet Details
| Part number | LTE21009R |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 55.73 KB |
| Description | NPN microwave power transistor |
| Datasheet |
 LTE21009R Datasheet
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General Description
1 c
APPLICATIONS
Common emitter class-A linear power amplifiers up to 4.2 GHz.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
Key Features
- Diffused emitter ballasting resistors.
- Self-aligned process entirely ion implanted and gold sandwich metallization.
- optimum temperature profile.
- excellent performance and reliability.
- Input matching cell improves input impedance and facilitates the design of wideband circuits. olumns LTE21009R.