LTE21009R - NPN microwave power transistor

NXP

Datasheet Details

Part number	LTE21009R
Manufacturer	NXP ↗
File Size	55.73 KB
Description	NPN microwave power transistor
Datasheet	LTE21009R_PhilipsSemiconductors.pdf

1 c APPLICATIONS Common emitter class-A linear power amplifiers up to 4.2 GHz.

Diffused emitter ballasting resistors.
Self-aligned process entirely ion implanted and gold sandwich metallization.
optimum temperature profile.
excellent performance and reliability.
Input matching cell improves input impedance and facilitates the design of wideband circuits. olumns LTE21009R.

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Published: Mar 27, 2005 |