LLE18300X Datasheet | NXP Semiconductors

FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR - Interdigitated structure provides high emitter efficiency - Gold metallization realizes very good stability of the characteristics and excellent lifetime - Multicell geometry gives good balance of dissipated power and low thermal resistance - Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATION Intended for use in mon emitter, class AB amplifiers in CW conditions for professional applications between 1.7 GHz and 2 GHz. DESCRIPTION 2 handbook, 4 columns QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥27 Gpo (d B) ≥7.8 ηC (%) Zi; ZL (Ω) Class AB (CW) 1.85 typ. 40 see Figs 8 and 9 PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b 3 e Top view MAM112 NPN silicon planar epitaxial microwave power transistor in an SOT437A glued cap metal ceramic flange package, with emitter connected to flange. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Pi Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter...