LLE18300X - NPN microwave power transistor

NXP

LLE18300X Datasheet Preview — Preview of LLE18300X PDF

Datasheet Details

Part number	LLE18300X
Manufacturer	NXP ↗
File Size	89.45 KB
Description	NPN microwave power transistor
Datasheet	LLE18300X_PhilipsSemiconductors.pdf

LLE18300X Product details

Description

2 handbook, 4 columns LLE18300X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB ampliﬁer.MODE OF OPERATION f (GHz) VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥27 Gpo (dB) ≥7.8 ηC (%) Zi; ZL (Ω) Class AB (CW) 1.85 typ.40 see Figs 8 and 9 PINNING - SOT437A PIN 1 2 3 collector base emitter connected to ﬂange DESCRIPTION 1 c b 3 e Top view MAM112 NPN silicon planar epitaxial microwave power transistor in an SOT437A glued cap metal ceramic flange package, with

Features

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Gold metallization realizes very good stability of the characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

📁 LLE18300X Similar Datasheet

LLE - MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS (Rubycon)

Other Datasheets by NXP

LLE18010X - NPN microwave power transistor
LLE18040X - NPN microwave power transistor
LLE18100X - NPN silicon planar epitaxial microwave power transistor
LLE18150X - NPN silicon planar epitaxial microwave power transistor
LLE15180X - NPN microwave power transistor
LLE15370X - NPN microwave power transistor

Published: Mar 22, 2005 |