Part LLE18300X
Description NPN microwave power transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 89.45 KB
NXP Semiconductors
LLE18300X

Overview

  • Interdigitated structure provides high emitter efficiency
  • Gold metallization realizes very good stability of the characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATION Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.7 GHz and 2 GHz. DESCRIPTION 2 handbook, 4 columns