LLE16350X - NPN microwave power transistor

NXP Semiconductors

Datasheet Details

Part number	LLE16350X
Manufacturer	NXP Semiconductors
File Size	103.66 KB
Description	NPN microwave power transistor
Datasheet	LLE16350X Datasheet

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.

Top view handbook, 4 columns LLE16350X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB ampliﬁer.

MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥29 Gpo (dB) ≥8 ηC (%) Zi;

Overview

DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product speciﬁcation Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product speciﬁcation NPN microwave power.

Key Features

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Gold metallization realizes very good stability of the characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

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