LFE18500X Datasheet NPN silicon planar epitaxial microwave power transistor

Manufacturer: NXP Semiconductors

LFE18500X npn silicon planar epitaxial microwave power transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	LFE18500X
Manufacturer	NXP Semiconductors
File Size	62.00 KB
Description	NPN silicon planar epitaxial microwave power transistor
Datasheet	LFE18500X Datasheet

General Description

NPN silicon planar epitaxial microwave power transistor in a FO-231 glued cap metal ceramic flange package, with emitter connected to flange.

Top view handbook, 4 columns LFE18500X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB ampliﬁer.

MODE OF OPERATION Class AB (CW) f (GHz) 1.85 VCE (V) 24 ICQ (A) 0.2 PL1 (W) ≥48 Gpo (dB) ≥7 ηC (%) Z i ;

Overview

DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product speciﬁcation File under Discrete Semiconductors, SC15 December 1994 Philips Semiconductors Philips.

Key Features

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Interdigitated structure provides high emitter efficiency.
Gold metallization realizes very good stability of the characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

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