LEE1015T Datasheet | NXP Semiconductors

FEATURES - Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR - Interdigitated structure provides high emitter efficiency - Gold metallization realizes very good stability of the characteristics and excellent lifetime - Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Intended for use in mon emitter, class A power amplifiers for applications that require a high level of linearity. DESCRIPTION MAM229 PINNING - SOT122A PIN 1 2 3 4 collector emitter base emitter DESCRIPTION handbook, halfpage 4 c 1 3 b e NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package. Marking code: 1015T. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class A narrowband amplifier (guaranteed values). MODE OF OPERATION Class A (CW) Note 1. The stated intermodulation distortion level is referred to the total output power of 18.25 d Bm, which corresponds to the sum of the power carried by each of the two equal amplitude tones at f1 = 859 MHz and f2 = 861 MHz. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. f (MHz) 860 20 VCE (V) IC (m A) 140 >1 PL1 (W) >13 Gpo (d B) dim (d B) <- 57 note 1 MAINTENANCE TYPE - NOT REMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC...