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LA6H0912-500 Datasheet, NXP

LA6H0912-500 transistor equivalent, ldmos avionics radar power transistor.

LA6H0912-500 Avg. rating / M : 1.0 rating-12

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LA6H0912-500 Datasheet

Features and benefits

I Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 128 µs with δ of 10 %: N Output power = 500 W N.

Application

in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF perfor.

Description

500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 128 µs; δ = 10 %; IDq = 1.

Image gallery

LA6H0912-500 Page 1 LA6H0912-500 Page 2 LA6H0912-500 Page 3

TAGS

LA6H0912-500
LDMOS
Avionics
Radar
Power
Transistor
NXP

Manufacturer


NXP (https://www.nxp.com/)

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