LA6H0912-500

LA6H0912-500 is LDMOS Avionics Radar Power Transistor manufactured by NXP Semiconductors.

  • Part: LA6H0912-500
  • Manufacturer: NXP Semiconductors
  • Size: 86.72 KB
Download LA6H0912-500 Datasheet PDF
LA6H0912-500 page 2
Page 2
LA6H0912-500 page 3
Page 3

LA6H0912-500 Description

500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Test information Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.