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J113 - N-channel silicon field-effect transistors

Description

Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes.

They are intended for applications such as analog switches, choppers, commutators etc.

Features

  • High speed switching.
  • Interchangeability of drain and source connections.
  • Low RDS on at zero gate voltage.

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Other Datasheets by NXP Semiconductors

Part Number Description
J110 N-channel silicon junction FETs
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J112 N-channel silicon field-effect transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDS on at zero gate voltage PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbook, halfpage 2 3 J111; J112; J113 g MAM042 d s Fig.1 Simplified outline and symbol, TO-92.
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