CGD1046HI Datasheet | NXP Semiconductors

1 GHz, 27 dB gain GaAs high output power doubler Rev. 1 - 30 July 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. 1.2 Features and benefits - - - - - - - - - Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain pensation over temperature Rugged construction Unconditionally stable Thermally optimized design pliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) - Integrated ring...