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BYV32E-200P Dual ultrafast power diode

BYV32E-200P Description

TO-220AB BYV32E-200P Dual ultrafast power diode 14 May 2015 Product data sheet 1.General .
Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package 2. Ultra low leakage current. High junction.

BYV32E-200P Features

* Ultra low leakage current
* High junction temperature up to 175 °C
* Low on-state loss
* Fast switching
* Soft recovery characteristic minimizes power consuming oscillations
* High reverse surge capability
* High thermal cycling performance

BYV32E-200P Applications

* Home appliance power supply 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IO(AV) average output current δ = 0.5; Tmb ≤ 149 °C; Square-ware pulse IFSM non-repetitive peak Tj(init) = 25 °C; tp = 8.3 ms; SIN;

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Datasheet Details

Part number
BYV32E-200P
Manufacturer
NXP ↗
File Size
165.32 KB
Datasheet
BYV32E-200P-NXP.pdf
Description
Dual ultrafast power diode

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Dual ultrafast power diode NXP
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