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BYV32E-200P - Dual ultrafast power diode

General Description

2.

Key Features

  • Ultra low leakage current.
  • High junction temperature up to 175 °C.
  • Low on-state loss.
  • Fast switching.
  • Soft recovery characteristic minimizes power consuming oscillations.
  • High reverse surge capability.
  • High thermal cycling performance.
  • Low thermal resistance 3.

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TO-220AB BYV32E-200P Dual ultrafast power diode 14 May 2015 Product data sheet 1. General description Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package 2. Features and benefits • Ultra low leakage current • High junction temperature up to 175 °C • Low on-state loss • Fast switching • Soft recovery characteristic minimizes power consuming oscillations • High reverse surge capability • High thermal cycling performance • Low thermal resistance 3. Applications • Home appliance power supply 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IO(AV) average output current δ = 0.5; Tmb ≤ 149 °C; Square-ware pulse IFSM non-repetitive peak Tj(init) = 25 °C; tp = 8.