BUK7909-75AIE datasheet, fet equivalent, NXP

Features and benefits

* Electrostatically robust due to integrated protection diodes
* Low conduction losses due to low on-state resistance
* Q101 compliant
* Reduced componen.

Application

1.2 Features and benefits
* Electrostatically robust due to integrated protection diodes
* Low conduction loss.

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been des.

Image gallery