| Description | Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for the... |
| Features |
and benefits
AEC Q101 compliant Suitable for intermediate level gate
drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V Automotive systems Electric and electro-hydraulic power
steering Motors, lamps and solenoid control
Start-Stop micro-hybrid applications Transmission control ...
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| Datasheet |
 BUK662R5-30C Datasheet - 172.90KB |
