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BUK652R6-40C Datasheet, NXP

BUK652R6-40C fet equivalent, n-channel trenchmos fet.

BUK652R6-40C Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 165.88KB)

BUK652R6-40C Datasheet
BUK652R6-40C
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 165.88KB)

BUK652R6-40C Datasheet

Features and benefits


* AEC Q101 compliant
* Suitable for intermediate level gate drive sources
* Suitable for thermally demanding environments due to 175 °C rating 1.3 Applicatio.

Application

1.2 Features and benefits
* AEC Q101 compliant
* Suitable for intermediate level gate drive sources
* Suit.

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high perform.

Image gallery

BUK652R6-40C Page 1 BUK652R6-40C Page 2 BUK652R6-40C Page 3

TAGS

BUK652R6-40C
N-channel
TrenchMOS
FET
NXP

Manufacturer


NXP (https://www.nxp.com/)

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