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BUK102-50GS Datasheet PowerMOS transistor TOPFET

Manufacturer: NXP Semiconductors

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General Description

Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK102-50GS QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX.

50 50 125 150 28 UNIT V A W ˚C mΩ APPLICATIONS General controller for driving lamps motors solenoids heaters

Overview

Philips Semiconductors Product specification PowerMOS transistor.

Key Features

  • Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads.

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