BUJ105AB
BUJ105AB is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat h FEsat tf
PARAMETER
Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage
Fall time
CONDITIONS VBE = 0 V
Tmb ≤ 25 ˚C IC = 4.0 A;IB = 0.8 A IC = 4.0 A; VCE = 5 V IC = 5 A; IB1 = 1 A
TYP.
0.3 11 20
MAX.
700 700 400
8 16 125 1.0 15 50
UNIT
V V V A A W V ns
PINNING
- SOT404
PIN DESCRIPTION
1 base 2 collector 3 emitter mb collector
PIN CONFIGURATION mb
2 13
SYMBOL c b e
LIMITING VALUES8
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj
Collector to emitter voltage Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC) Collector current peak value
Base current (DC)
Base current peak value Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb
Rth...
