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NXP Semiconductors Electronic Components Datasheet

BUJ103AD Datasheet

Silicon diffused power transistor

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BUJ103AD
Silicon diffused power transistor
Rev. 2 — 8 November 2011
Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428
(D-PAK) surface mounted package.
1.2 Features and benefits
Low thermal resistance
Fast switching
1.3 Applications
Electronic lighting ballasts
Inverters
DC-to-DC converters
Motor control systems
1.4 Quick reference data
VCESM 700 V
Ptot 80 W
IC 4 A
hFEsat = 12.5 (typ)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
base
collector
emitter
mounting base; connected to collector
Simplified outline
mb
[1]
2
13
SOT428 (D-PAK)
[1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package.
Symbol
2
1
3
sym056


NXP Semiconductors Electronic Components Datasheet

BUJ103AD Datasheet

Silicon diffused power transistor

No Preview Available !

NXP Semiconductors
BUJ103AD
Silicon diffused power transistor
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
Version
BUJ103AD
D-PAK
plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCESM
VCBO
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
peak collector-emitter voltage
collector-base voltage
collector-emitter voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
storage temperature
junction temperature
VBE = 0 V
open emitter
open base
Tmb 25 C; see Figure 1
Min Max Unit
- 700 V
- 700 V
- 400 V
- 4A
- 8A
- 2A
- 4A
- 80 W
65 +150 C
- 150 C
120
Pder
(%)
80
001aab993
40
0
0 40 80 120 160
Tmb (°C)
Pder%
=
--------P----t--o---t------- 100%
Ptot25 C
Fig 1. Normalized total power dissipation as a function of mounting base temperature
BUJ103AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
2 of 13


Part Number BUJ103AD
Description Silicon diffused power transistor
Maker NXP
Total Page 13 Pages
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