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BUJ103A - Silicon Diffused Power Transistor

Description

High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.

Features

  • Low thermal resistance.
  • Fast switching 1.3.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TO-220AB BUJ103A Silicon diffused power transistor Rev. 4 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits  Low thermal resistance  Fast switching 1.3 Applications  Electronic lighting ballasts  Inverters  DC-to-DC converters  Motor control systems 1.4 Quick reference data  VCESM  700 V  Ptot  80 W  IC  4 A  hFEsat = 12.5 (typ) 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description base collector emitter mounting base; connected to collector Simplified outline mb Symbol 2 1 3 sym056 123 SOT78 (TO-220AB) NXP Semiconductors BUJ103A Silicon diffused power transistor 3.
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