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BUJ103 - Silicon Diffused Power Transistor

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Part number BUJ103
Manufacturer NXP
File Size 103.02 KB
Description Silicon Diffused Power Transistor
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BUJ103A High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak val

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