BUJ100
BUJ100 is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use in pact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat h FE tfi
PARAMETER
Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage
Fall time (Inductive)
CONDITIONS VBE = 0 V
Tlead ≤ 25 ˚C IC = 0.75 A;IB = 150m A IC = 0.75 A;VCE = 5 V IC = 1.0 A;IBON = 200m A
TYP.
0.24 14 50
MAX.
700 700 400 1.0 2.0
2 1.0 20 70
UNIT
V V V A A W V ns
PINNING
- TO92
PIN DESCRIPTION
1 Emitter 2 Collector 3 Base
PIN CONFIGURATION
3 21
SYMBOL c b e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter) Collector current (DC)
Collector current peak value
Base current (DC) Base current peak value
Total power dissipation
Storage temperature Junction temperature
VBE = 0 V Tlead ≤ 25 ˚C
MIN.
-65
- MAX.
700 400 700 1.0 2.0 0.5...
