Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ100 Silicon Diffused Power Transistor
Product specification
September 1999
NXP Semiconductors
Silicon Diffused Power Transistor
Product specification
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use in pact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi
PARAMETER
Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power...
