BU508DX
DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.7 MAX. 1500 700 8 15 45 1.0 2.0 UNIT V V A A W V A V µs
Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.6 A f = 16k Hz IF = 4.5 A ICsat = 4.5 A; f = 16k Hz
PINNING
- SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION case
SYMBOL c b
1 2 3 case isolated e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER...
