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BU508DX - Silicon Diffused Power Transistor

Description

High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.7 MAX. 1500 700 8 15 45 1.0 2.0 UNIT V V A A W V A V µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.6 A f = 16kHz IF = 4.
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