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BU2508AX - Silicon Diffused Power Transistor

Description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.

Features

  • exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK.

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Datasheet Details

Part number BU2508AX
Manufacturer NXP
File Size 74.89 KB
Description Silicon Diffused Power Transistor
Datasheet download datasheet BU2508AX Datasheet
Additional preview pages of the BU2508AX datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.4 MAX.
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