Datasheet Summary
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 1.5 0.25 MAX. 1750 850 5 8 32 1.0 0.6 UNIT V V A A W V A...
