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NXP Semiconductors Electronic Components Datasheet

BTA310X-800E Datasheet

3Q Hi-Com Triac

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BTA310X-800E
3Q Hi-Com Triac
28 May 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package. This "series E" triac balances the requirements of commutation
performance and gate sensitivity and is intended for interfacing with low power drivers
including microcontrollers.
2. Features and benefits
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
Industrial and domestic heating circuits
Motor controls e.g. washing machines and vacuum cleaners
Refrigeration and air-conditioner compressor controls
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 4
Tj junction temperature
IT(RMS)
RMS on-state current full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2;
Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 6
Min Typ Max Unit
- - 800 V
- - 85 A
- - 125 °C
- - 10 A
0.5 -
10 mA
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NXP Semiconductors Electronic Components Datasheet

BTA310X-800E Datasheet

3Q Hi-Com Triac

No Preview Available !

NXP Semiconductors
BTA310X-800E
3Q Hi-Com Triac
Symbol
Parameter
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 6
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 6
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 10 A;
dVcom/dt = 1 V/µs; gate open circuit
Min Typ Max Unit
0.5 -
10 mA
0.5 -
10 mA
50 - - V/µs
6 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 23
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA310X-800E
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
BTA310X-800E
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 12


Part Number BTA310X-800E
Description 3Q Hi-Com Triac
Maker NXP
Total Page 12 Pages
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