BTA216-600BT Datasheet | NXP Semiconductors

TO-220AB Triacs high mutation Rev. 2 - 9 November 2011 Product data sheet 1. Product profile 1.1 General description Passivated high mutation triac in a plastic envelope. Featuring high maximum junction temperature and high mutation capability. Intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This device will mutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. 1.2 Features and benefits - High maximum junction temperature - High mutation capability 1.3 Quick reference data - VDRM  600 V - IGT  50 mA - Tj  150 C - IT(RMS)  16 A - ITSM  140 A - dI/dt =...