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NXP Semiconductors Electronic Components Datasheet

BTA206X-800CT Datasheet

3Q Hi-Com Triac

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BTA206X-800CT
3Q Hi-Com Triac
22 May 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package intended for use in circuits where high static and dynamic dV/dt
and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the
maximum rated junction temperature (Tj = 150 °C) without the aid of a snubber. it is used
where "high junction operating temperature capability" is required.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Applications subject to high temperature
Electronic thermostats (heating and cooling)
Motor controls for home appliances
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
VDRM
ITSM
Tj
IT(RMS)
Quick reference data
Parameter
Conditions
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
junction temperature
RMS on-state current full sine wave; Th ≤ 114 °C; Fig. 1;
Fig. 2; Fig. 3
Min Typ Max Unit
- - 800 V
- - 60 A
- - 150 °C
- - 6A
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NXP Semiconductors Electronic Components Datasheet

BTA206X-800CT Datasheet

3Q Hi-Com Triac

No Preview Available !

NXP Semiconductors
BTA206X-800CT
3Q Hi-Com Triac
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
Min Typ Max Unit
4-
4-
4-
35 mA
35 mA
35 mA
500 - - V/µs
10 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 23
TO-220F (SOT186A)
BTA206X-800CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 13


Part Number BTA206X-800CT
Description 3Q Hi-Com Triac
Maker NXP
Total Page 13 Pages
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