BLW81 Datasheet | NXP Semiconductors

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. Product specification QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized mon-emitter class-B circuit MODE OF OPERATION VCE V f MHz PL W Gp d B η % c.w. 12,5 470 10 > 6,0 > 60 c.w. 12,5 175 10 typ. 13,5 typ. 60 zi Ω 1,3 + j2,5 1,2 - j0,6 YL m S - j66 140 - j80 PIN CONFIGURATION handbook, halfpage 4 1 PINNING - SOT122A. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. March 1993 Philips Semiconductors UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c. or average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC ICM Ptot Tstg Tj Product specification BLW81 max 36 V max 17 V max 4 V max 2,5 A max 7,5 A max 40 W - 65 to +150 °C max 200 °C handbook,1h0alfpage IC...