Part BLU6H0410L-600P
Description Power LDMOS transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 214.66 KB
NXP Semiconductors

BLU6H0410L-600P Overview

Key Features

  • Excellent ruggedness (VSWR  40 : 1 through all phases)
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
  • High power gain
  • High efficiency
  • Internal input matching for high gain and optimum broadband operation
  • Excellent reliability
  • Easy power control
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications