BLF640 transistor equivalent, broadband power ldmos transistor.
* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* No internal matching for.
at frequencies from HF to 2200 MHz
Table 1. Typical performance IDq = 100 mA; Tcase = 25 C in a common source class-AB.
10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz
Table 1. Typical performance IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V)
(W)
(dB).
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