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BLF2425M7L250P - Power LDMOS transistor

BLF2425M7L250P Description

BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev.4 * 12 July 2013 Product data sheet 1.Product profile 1.1 General .
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

BLF2425M7L250P Features

* High efficiency
* Easy power control
* Excellent ruggedness
* Excellent thermal stability
* Integrated ESD protection
* Designed for broadband operation (2400 MHz to 2500 MHz)
* Internally matched
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardo

BLF2425M7L250P Applications

* at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance RF performance at Tcase = 25 C in a common sour

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Datasheet Details

Part number
BLF2425M7L250P
Manufacturer
NXP ↗
File Size
170.66 KB
Datasheet
BLF2425M7L250P-NXP.pdf
Description
Power LDMOS transistor

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