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BLF2425M6LS180P - Power LDMOS transistor

Download the BLF2425M6LS180P datasheet PDF. This datasheet also covers the BLF2425M6L180P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Easy power control.
  • Integrated ESD protection.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (2400 MHz to 2500 MHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF2425M6L180P-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp (MHz) (mA) (V) (W) (dB) CW 2450 10 28 180 13.3 D (%) 53.5 1.
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