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BLF2022-125 - UHF power LDMOS transistor

Description

125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.

Fig.1 Simplified outline.

Features

  • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A.
  • Output power = 20 W (AV).
  • Gain = 12 dB.
  • Efficiency = 19%.
  • ACPR =.
  • 42 dBc at 3.84 MHz.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for broadband operation (2000 to 2200 MHz).
  • Internally matched for ease of use.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 2003 Mar 07 www.DataSheet4U.com Philips Semiconductors Objective specification UHF power LDMOS transistor FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A – Output power = 20 W (AV) – Gain = 12 dB – Efficiency = 19% – ACPR = −42 dBc at 3.84 MHz • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (2000 to 2200 MHz) • Internally matched for ease of use.
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