• Part: BGU8L1
  • Description: amplifier MMIC
  • Manufacturer: NXP Semiconductors
  • Size: 100.91 KB
Download BGU8L1 Datasheet PDF
NXP Semiconductors
BGU8L1
description The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external matching inductor. The BGU8L1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 14 d B gain at a noise figure of 0.7 d B. During high-power levels, it temporarily increases its bias current to improve sensitivity. The BGU8L1 is optimized for 728 MHz to 960 MHz. 2. Features and benefits - Operating frequency from 728 MHz to 960 MHz - Noise figure = 0.7 d B - Gain = 14 d B - High input 1 d B pression point of - 3 d Bm - High in band IP3i of 2 d Bm - Supply voltage 1.5 V to 3.1 V - Self-shielding package concept - Integrated supply decoupling capacitor - Optimized performance at a supply current of...