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BGS8M2 Datasheet amplifier MMIC

Manufacturer: NXP Semiconductors

Overview: BGS8M2 SiGe:C low-noise amplifier MMIC with bypass switch for LTE Rev.

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General Description

The BGS8M2 is, also known as the LTE3001M, a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package.

The BGS8M2 requires one external matching inductor.

The BGS8M2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required.

Key Features

  • Operating frequency from 1805 MHz to 2200 MHz.
  • Noise figure = 0.85 dB.
  • Gain 14.4 dB.
  • High input 1 dB compression point of -3.5 dBm.
  • Bypass switch insertion loss of 2.2 dB.
  • High in band IP3i of 3.5 dBm.
  • Supply voltage 1.5 V to 3.1 V.
  • Self-shielding package concept.
  • Integrated supply decoupling capacitor.
  • Optimized performance at a supply current of 5.8 mA.
  • Power-down mode current consumption < 1 µA.

More Datasheets from NXP Semiconductors

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BGS67 65 MHz/ 25.5 dB gain reverse amplifier
BGS67A 65 MHz/ 25.5 dB gain reverse amplifier