BFU910F Datasheet | NXP Semiconductors

NPN wideband silicon germanium RF transistor Rev. 2 - 16 January 2015 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal applications up to 20 GHz. 1.2 Features and benefits - Low noise high gain microwave transistor - Minimum noise figure (NFmin) = 0.65 d B at 12 GHz - Maximum stable gain 14.2 d B at 12 GHz - 90 GHz f T Si Ge technology 1.3 Applications - Ku band DBS Low-Noise blocks 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCE collector-emitter voltage RBE  1 M IC collector current Ptot total power dissipation Tsp  90 C h FE DC current gain IC = 6 m A; VCE = 2 V CCBS collector-base capacitance VCB = 2 V; f = 1 MHz f T transition frequency IC = 6 m A; VCE = 2 V MSG maximum stable gain IC = 6 m A; VCE = 2 V; f = 12 GHz NFmin minimum noise figure IC = 6 m A; VCE = 2 V; f = 12 GHz; S =...