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BFU910F - NPN wideband silicon germanium RF transistor

Description

NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

The BFU910F is suitable for small signal applications up to 20 GHz.

Features

  • Low noise high gain microwave transistor.
  • Minimum noise figure (NFmin) = 0.65 dB at 12 GHz.
  • Maximum stable gain 14.2 dB at 12 GHz.
  • 90 GHz fT SiGe technology 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BFU910F NPN wideband silicon germanium RF transistor Rev. 2 — 16 January 2015 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal applications up to 20 GHz. 1.2 Features and benefits  Low noise high gain microwave transistor  Minimum noise figure (NFmin) = 0.65 dB at 12 GHz  Maximum stable gain 14.2 dB at 12 GHz  90 GHz fT SiGe technology 1.3 Applications  Ku band DBS Low-Noise blocks 1.4 Quick reference data Table 1.
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