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BFQ131 - NPN video transistor

Description

base collector emitter DESCRIPTION NPN silicon transistor in a 3-lead plastic SOT54 package.

Fig.1 Simplified outline SOT54.

MAX.

175 UNIT V mA W GHz pF °C 1995 Sep 26 2 Philips Semiconductors Product specification NPN video transistor LIMI

Features

  • Low output capacitance.
  • High dissipation.
  • High gain bandwidth product.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BFQ131 NPN video transistor Product specification File under Discrete Semiconductors, SC05 1995 Sep 26 Philips Semiconductors Product specification NPN video transistor FEATURES • Low output capacitance • High dissipation • High gain bandwidth product. PINNING APPLICATIONS • Buffer stage in colour monitors between the video amplifier and the input of the video module • Pre-stage (cascode driver) in discrete video amplifiers. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Cre Tj PARAMETER collector-emitter voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature up to Ts = 60 °C; see Fig.2 IC = 100 mA; VCE = 10 V; see Fig.4 IC = 0; VCE = 10 V; see Fig.5 open base CONDITIONS − − − 4 1.2 − TYP.
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