BFG505W - NPN 9 GHz wideband transistors

NXP Semiconductors

Description

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.

Features

High power gain.
Low noise figure.
High transition frequency.
Gold metallization ensures excellent reliability.

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BFG505W npn 9 ghz wideband transistors by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BFG505W
Manufacturer	NXP Semiconductors
File Size	148.95 KB
Description	NPN 9 GHz wideband transistors
Datasheet	BFG505W Datasheet

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BFG505	NPN 9 GHz wideband transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D123 BFG505W; BFG505W/X NPN 9 GHz wideband transistors Product speciﬁcation Supersedes data of August 1995 1998 Oct 02 Philips Semiconductors Product speciﬁcation NPN 9 GHz wideband transistors BFG505W; BFG505W/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV).