BFG325W-XR transistor equivalent, npn 14 ghz wideband transistor.
* High power gain
* Low noise figure
* High transition frequency
* Gold metallization ensures excellent reliability
1.3 Applications
* Intended for R.
* Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
* analog and digital cellu.
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features and benefits
* High power gain
* Low noise figure
* High transition frequency
* Gold metallization ensures excellent reliability
1.
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