BFG325W-XR
description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features and benefits
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
1.3 Applications
- Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
- analog and digital cellular telephones
- cordless telephones (Cordless Telephone (CT), Personal munication Network (PCN), Digital Enhanced Cordless Telemunications (DECT), etc.)
- radar detectors
- pagers
- Satellite Antenna Tele Vision (SATV) tuners
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VCBO VCEO IC Ptot h FE
CCBS collector-base voltage open emitter collector-emitter voltage open base collector current (DC) total power dissipation DC current gain collector-base capacitance
Tsp 90 C
IC = 15 m A; VCE = 3 V; Tj = 25 C
VCB = 5 V; f = 1 MHz; emitter grounded f T transition frequency
IC =...
