BFG325W-XR Description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
BFG325W-XR Key Features
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
BFG325W-XR Applications
- Intended for Radio Frequency (RF) front end applications in the GHz range, such as: analog and digital cellular telephones cordless telephones (Cordless Tel