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BD830 - PNP power transistor

Description

PNP power transistor in a TO-202; SOT128B plastic package.

NPN complement: BD829.

Simplified outline (TO-202; SOT128B) and symbol.

Features

  • High current (max. 1 A).
  • Low voltage (max. 80 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD830 PNP power transistor Product specification Supersedes data of 1998 May 29 1999 Apr 21 Philips Semiconductors Product specification PNP power transistor FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose • Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION PNP power transistor in a TO-202; SOT128B plastic package. NPN complement: BD829. 3 1 handbook, halfpage BD830 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 1 2 3 MAM304 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
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