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BC847BV - NPN general purpose double transistor

Description

TR1; TR2 TR1; TR2 TR1; TR2 handbook, halfpag6e 5 4 65 4 APPLICATIONS

General purpose switching and amplification.

DESCRIPTION NPN double transistor in a SOT666 plastic package.

PNP complement: BC857BV.

Features

  • 300 mW total power dissipation.
  • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package.
  • Excellent coplanarity due to straight leads.
  • Low collector capacitance.
  • Improved thermal behaviour due to flat leads.
  • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors.
  • Reduces required board space.
  • Reduces pick and place costs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BV NPN general purpose double transistor Product data sheet 2001 Sep 10 NXP Semiconductors NPN general purpose double transistor Product data sheet BC847BV FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector capacitance • Improved thermal behaviour due to flat leads • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors • Reduces required board space • Reduces pick and place costs. PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 handbook, halfpag6e 5 4 65 4 APPLICATIONS • General purpose switching and amplification.