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BAW101S - High voltage double diode

General Description

anode 1 n.c.

cathode 2 anode 2 n.c.

The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package.

Key Features

  • Small plastic SMD package.
  • High switching speed: max. 50 ns.
  • High continuous reverse voltage: 300 V.
  • Electrically insulated diodes.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BAW101S High voltage double diode Product data sheet 2003 May 13 NXP Semiconductors High voltage double diode Product data sheet BAW101S FEATURES • Small plastic SMD package • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Electrically insulated diodes. APPLICATIONS • High voltage switching • Automotive • Communication. PINNING PIN 1 2 3 4 5 6 DESCRIPTION anode 1 n.c. cathode 2 anode 2 n.c. cathode 1 DESCRIPTION The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. handbook, halfpage 65 4 65 4 MARKING TYPE NUMBER BAW101S MARKING CODE(1) K2∗ Note 1. ∗ = p: Made in Hong Kong.