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BAT120 - Schottky barrier double diodes

Description

PINNING BAT120 PIN A 1 2 3 4 k1 n.c.

k2 a1, a2 C a1 n.c.

a2 k1, k2 S a1 n.c.

Features

  • Low switching losses.
  • Capability of absorbing very high surge current.
  • Fast recovery time.
  • Guard ring protected.
  • Plastic SMD package.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 1998 Oct 30 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package 1 2 3 MSB002 - 1 BAT120 series PINNING BAT120 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 BAT120A diode configuration (symbol). 2 n.c. MGL171 4 page 1 3 age 4 page 4 1 3 2 n.c.
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