A3M36SL037I Datasheet | NXP Semiconductors

feature with the option to overwrite production settings. Autobias automatically sets and regulates transistor bias over temperature upon power up. An integrated sensor for monitoring temperature is also present. munications to the module can be acplished via either I2C or SPI. 3400- 3800 MHz Typical LTE Performance: Pout = 5 W Avg., VDD = 27 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 d B @ 0.01% Probability on CCDF.1 Carrier Center Frequency Gain (d B) ACPR (d Bc) PAE (%) 3410 MHz - 29.1 3600 MHz - 35.6 3790 MHz - 33.6 1. All data measured with device soldered in NXP reference circuit. Features - Advanced high performance in-package Doherty - Fully matched (50 ohm input/output, DC blocked) - Designed for low plexity digital linearization systems - Autobias on power up - Temperature sensing - Digital interface (I2C or SPI) - Embedded registers and DACs for setting bias conditions - Tx Enable control pin for TDD operation A3M36SL037I A3M36SL037S 3400- 3800 MHz, 29 d B, 5 W Avg. Airfast Power Amplifier Module with Autobias Control 10 mm × 8 mm Module NXP reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Contents 1 1.1 1.2 2 2.1 2.1.1 2.1.2 2.1.3 2.1.4 2.2 2.2.1 2.2.2 2.2.3 2.2.4 3 3.1 3.2 4 5 5.1 5.2 5.3 5.4 5.5 5.6 6 Pinout configuration and function 3 Pin connections 3 Functional pin description Electrical characteristics 4 Ratings 4 Maximum ratings 4 Lifetime 5 ESD protection characteristics 5 Moisture sensitivity level 5 Operating characteristics 5 Nominal DAC...