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A3G26H502W17S Datasheet, NXP

A3G26H502W17S transistor equivalent, rf power gan transistor.

A3G26H502W17S Avg. rating / M : 1.0 rating-12

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A3G26H502W17S Datasheet

Features and benefits


* High terminal impedances for optimal broadband performance
* Advanced high performance in--package Doherty
* Improved linearized error vector magnitude with.

Application

requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This part is ch.

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TAGS

A3G26H502W17S
Power
GaN
Transistor
A3G26D055N
A3G
A3G4250D
NXP

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