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A2G35S200-01SR3 Datasheet, NXP

A2G35S200-01SR3 transistor equivalent, rf power gan transistor.

A2G35S200-01SR3 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 330.12KB)

A2G35S200-01SR3 Datasheet
A2G35S200-01SR3
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 330.12KB)

A2G35S200-01SR3 Datasheet

Features and benefits


* High Terminal Impedances for Optimal Broadband Performance
* Designed for Digital Predistortion Error Correction Systems
* Optimized for Doherty Application.

Application

requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz. This part is characterized.

Image gallery

A2G35S200-01SR3 Page 1 A2G35S200-01SR3 Page 2 A2G35S200-01SR3 Page 3

TAGS

A2G35S200-01SR3
Power
GaN
Transistor
NXP

Manufacturer


NXP (https://www.nxp.com/)

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