Datasheet4U Logo Datasheet4U.com

1PS10SB82 - Schottky barrier diode

General Description

An epitaxial Schottky barrier diode encapsulated in a SOD882 leadless ultra small plastic package.

ESD sensitive device, observe handling precautions.

2.

Key Features

  • Low forward voltage.
  • Low diode capacitance.
  • Leadless ultra small plastic package (1.0 mm x 0.6 mm x 0.48 mm).
  • Boardspace 1.17 mm² (approx. 10 % of SOT23).
  • Power dissipation comparable to SOT23 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
1PS300 Dual high-speed switching diode nexperia
1PS302 Dual high-speed switching diode nexperia
1PS66SB82 Schottky barrier diodes nexperia
1PS70SB10 Schottky barrier single diode nexperia
1PS70SB15 Dual Schottky barrier diode nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
1PS181 High-speed double diode
1PS184 High-speed double diode
1PS193 High-speed diode
1PS226 High-speed double diode
1PS300 Dual high-speed switching diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1PS10SB82 Schottky barrier diode 13 November 2019 Product data sheet 1. General description An epitaxial Schottky barrier diode encapsulated in a SOD882 leadless ultra small plastic package. ESD sensitive device, observe handling precautions. 2. Features and benefits • Low forward voltage • Low diode capacitance • Leadless ultra small plastic package (1.0 mm x 0.6 mm x 0.48 mm) • Boardspace 1.17 mm² (approx. 10 % of SOT23) • Power dissipation comparable to SOT23 3. Applications • UHF mixers • Sampling circuits • Modulators • Phase detectors • Mobile devices 4. Quick reference data Table 1. Quick reference data Symbol Parameter VR reverse voltage VF forward voltage Conditions IF = 30 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Min Typ Max Unit - - 15 V - - 700 mV 5.