Datasheet4U Logo Datasheet4U.com

TIP126 Datasheet - NTE

TIP126 Silicon PNP Transistor

TIP126 Features

* D High DC Current Gain: hFE = 2500 (Typ) at IC = 4A D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 80V (Min) at IC = 100mA D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 2.0V (Max) at IC = 3A Low Collector

* Emitter Saturation Voltage: VCE(sat) = 4.0V (Max) at IC

TIP126 Datasheet (55.84 KB)

Preview of TIP126 PDF
TIP126 Datasheet Preview Page 2

Datasheet Details

Part number:

TIP126

Manufacturer:

NTE

File Size:

55.84 KB

Description:

Silicon pnp transistor.

📁 Related Datasheet

TIP120 Darlington NPN Power Transistors (TAITRON)

TIP120 NPN Transistor (WEITRON)

TIP120 NPN Epitaxial Darlington Transistors (MCC)

TIP120 NPN PLASTIC POWER TRANSISTORS (CDIL)

TIP120 Silicon NPN Darlington Power Transistors (SavantIC)

TIP120 NPN SILICON POWER DARLINGTONS (Bourns)

TIP120 NPN Transistor (INCHANGE)

TIP120 NPN Epitaxial Darlington Transistor (Fairchild)

TAGS

TIP126 Silicon PNP Transistor NTE

TIP126 Distributor